GaN Power Devices Market: Japan to Remain Most Lucrative Region through 2027

Dec 12,2017 | Technology

Gallium Nitride (GaN) is the material, which is used for the manufacturing of semiconductor power devices as well as light emitting diodes and RF components. GaN has demonstrated the capability to be the displacement technology for silicon semiconductors in power conversion, analog applications and RF.

Gan Power Devices Market

The Japanese electronics industry is one of the largest consumer electronics industries in...

Gan Power Devices Market

A report triggered by Future Market Insights (FMI) states that the global GaN power devices market compresses several expansions and in addition mid-level sellers, owing to number of lucrative open doors in the market. According to the report, the global GaN devices market is estimated to witness expansion at double-digit CAGR throughout the assessment period (2017-2027).

Japan to Remain Dominant in Global GaN Power Devices Market

The hardware industry in Japan is the prominent purchaser of the gadgets ventures across the globe. With a huge income share, demand for semiconductors is high and GaN power devices are being decreased, effective and with low capacitance, overtake nearly limiting vitality misfortunes amid charging and releasing. This factor is likely to increase demand for GaN products and in this manner market will gain momentum.

GaN has wide application as a part in transistors and due to its enhanced properties, for instance, high warm conductivity, high voltage potential, substantial basic fields, these gadgets deliver high exchanging frequencies and better power thickness empowering transistors tofre work at high voltage levels. Such type of transistors have many uses in various in different fields and provide better outcomes, this is another driving factor influencing growth of the market. A best example for it is- a IT gear producing organization situated in Japan, Fujitsu Limited, in Jan 2016, built up a GaN high-portability transistor power developer with significant yield execution of the world for wideband remote broadcasts, that was 1.8X more noteworthy than some time recently, permitting over 30% more prominent range foe a fast remote system.

Increasing developing work activities in GaN substrate in charge of the development of the Japan GaN power devices market. Owing to GaN innovation highlights, for example, scaling down, high breakdown voltage, high exchanging recurrence, demand for GaN power devices has been propelling and continuous research has been finished by inquiries of focuses in Japan and incremental competences of GaN. Moreover, couple of years ago, a team of specialist from the institute of Industrial science at the Tokyo University discovered other innovation for manufacturing GaN LEDs on the crystal substrate. Costs for fabrication can be cut down along with actuating OLED light boards, with implementation of this improvement.

Restraints

However, shrinking path of the semiconductor is the key factor that is limiting the growth of the GaN power devices market. Problems associated with present assembly and interconnect technologies are growing with expanding high current density in GaN devices. The major problem consist of low impedance interconnects, higher thermal resistance and lower thermal capacitance per chip requiring more chip temperature and better thermal interconnects. The requirement for handling present densities per package and the similar heat flow generating by smaller footprints to be removed from the ambient atmosphere is also increasing. Such factors are anticipated to remain key challenge for growth of GaN market in Japan region.

Competitive Landscape

Several leading players operating in the market that are profiled in the report include Texas Instruments Incorporated, Qorvo, Inc., Infineon Technologies AG, Toshiba Corporation, Panasonic Corporation, and NXP Semiconductors N.V. The market is anticipated to witness section of acute number of GaN power gadget sellers in foreseeable period, increasing the opposition. Some other prominent players in the market, that have huge contribution in the growth of the market are POWDEC, GaN Systems Inc., Wolfspeed, Inc., EXAGAN,Transphorm Inc., AIXTRON SE, STMicroelectronics, IQE PLC, and Efficient Power Conversion Corporation.

For more insights on the global GaN Power Devices Market, Future Market Insights analysts are available for discussions at press@futuremarketinsights.com

About Technology Division at Future Market Insights

The technology team at Future Market Insights offers expert analysis, time efficient research, and strategic recommendations with an objective to provide authentic insights and accurate results to help clients worldwide. With a repertoire of over 100+ reports and 1 million+ data points, the team has been analyzing the industry lucidly in 50+ countries for over a decade. The team provides a brief analysis on key trends including competitive landscape, profit margin, and research development efforts.

About Future Market Insights (FMI)

Future Market Insights (FMI) is a leading provider of market intelligence and consulting services, serving clients in over 150 countries. FMI is headquartered in Dubai, and has delivery centers in the UK, U.S. and India. FMI's latest market research reports and industry analysis help businesses navigate challenges and make critical decisions with confidence and clarity amidst breakneck competition. Our customized and syndicated market research reports deliver actionable insights that drive sustainable growth. A team of expert-led analysts at FMI continuously tracks emerging trends and events in a broad range of industries to ensure that our clients prepare for the evolving needs of their consumers.